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MTP3055V
Preferred Device
Power MOSFET
12 Amps, 60 Volts
N ? Channel TO ? 220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
? On ? resistance Area Product about One ? half that of Standard
MOSFETs with New Low Voltage, Low R DS(on) Technology
? Faster Switching than E ? FET Predecessors
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperature
? Static Parameters are the Same for both TMOS V and
TMOS E ? FET
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
12 AMPERES
50 VOLTS
R DS(on) = 150 m Ω
N ? Channel
D
G
S
Rating
Symbol
Value
Unit
Drain ? Source Voltage
V DSS
60
Vdc
MARKING DIAGRAM
Drain ? Gate Voltage (R GS = 1.0 M Ω )
Gate ? Source Voltage
? Continuous
? Non ? Repetitive (t p ≤ 10 ms)
V DGR
V GS
V GSM
60
± 20
± 25
Vdc
Vdc
Vpk
4
& PIN ASSIGNMENT
4
Drain
Drain Current ? Continuous @ 25 ° C
Drain Current ? Continuous @ 100 ° C
Drain Current ? Single Pulse (t p ≤ 10 μ s)
Total Power Dissipation @ 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc,
I L = 12 Apk, L = 1.0 mH, R G = 25 Ω )
I D
I D
I DM
P D
T J , T stg
E AS
12
7.3
37
48
0.32
? 55 to
175
72
Adc
Apk
Watts
W/ ° C
° C
mJ
1
2
3
TO ? 220AB
CASE 221A
STYLE 5 MTP3055V
LLYWW
1
Gate
2
Drain
MTP3055V = Device Code
LL = Location Code
3
Source
Thermal Resistance ? Junction to Case
Thermal Resistance ? Junction to Ambient
R θ JC
R θ JA
3.13
62.5
° C/W
Y
WW
= Year
= Work Week
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
T L
260
° C
ORDERING INFORMATION
Device
Package
Shipping
MTP3055V
TO ? 220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
August, 2006 ? Rev. 4
1
Publication Order Number:
MTP3055V/D
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相关代理商/技术参数
MTP3055V 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
MTP3055V_L86Z 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTP3055VL 功能描述:MOSFET 60V Single N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTP3055VL 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 60V 12A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 12A, TO-220
MTP3055VL_Q 功能描述:MOSFET 60V Single N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MTP30N06VL 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM
MTP30N08M 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR
MTP30P06 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM